Important Dates

Abstract submission opening:
1 May 2026 (Fr)

Abstract submission deadline:
15 June 2026 (Mo)
29 June 2026 (Mo)

Notification of Acceptance:
29 June 2026 (Mo)
13 July 2026 (Mo)

Early registration:
21 August 2026 (Fr)

Conference:
5 – 8 October 2026


Legend:

Invited

Contributed

Social programme

Day 1 - Monday 5 October

09:00-09:45 Plenary – Abu Sebastian
EC-RAM / Protonic devices Edge Computing
10:10-10:35 Electrochemical Ionic Synapses for Energy-Efficient Brain-Inspired Computing
Bilge Yildiz - MIT, Boston
Development of Emerging Memory Devices and Their Applications for Edge Computing
Shinhyun Choi - KAIST, Daejeon
10:35-11:50 Multifunctional MoOx-based Volatile Memristor with Tunable Relaxation Dynamics Enabling Artificial Nociception and Neuromorphic Computing
Anusha Dsouza - CeNS, Bangalore
Precision-Energy Trade-offs in 28nm RRAM-Based MAC Arrays
Ankit Bende - FZ Jülich
Proton based logic-and-memory in double-gated 2D materials
Marcelo Lozada-Hidalgo - U Manchester
Energy-efficient uncertainty quantification via gate-tunable 1A1M synaptic array for Bayesian neural network
Hyeon Bin Kim - KU-KIST, Seoul
Aqueous proton-permeable graphene chemimemristor for robust electrochemical reservoir computing
Senlin Tang - MPI P Mainz
Monolithic 3D integrated memristor array for low-interfered and high-density in-memory computing
Yeon Seo An - KU-KIST, Seoul
Bidirectional Analogue Conductance Modulation in Wafer-Scale Ag/SnOx Electrochemical Metallisation Memristors
Zohreh Hajiabadi - U Southhampton
Memristor crossbar arrays as stateful outer-product engines for fully-parallel backpropagation weight updates
Chenfei Miao - Tsinghua U, Beijing
Temporal Evolution of Programmed Conductance in IGZO/HfO2 Electrochemical Random-Access Memory
Jung Kyu Lee - SNU, Seoul
A Fully Integrated Low-Power DNN Processor for In-Memory Computing Based on Non-Filamentary Nb₂O₅/CeO₂ Memristors
Kitae Park - UNIST, Ulsan
Electrochemical metallization Opticalelectronic Memristors
13:35-14:05 Engineering of the volatile dynamics of Ag-based electrochemical memristors
Stefano Brivio - CNR-IMM, Agrate
Dye-sensitized Optoelectronic Synapses for Physical Reservoir Computing-based Motion Vision Systems
Takashi Ikuno - Tokyo U of Science
14:05-15:20 Synaptic Dynamics in Soft Metal–Polymer Formulations for Neuromorphic Computing
Pedro Ferreira - U Porto
Parallel Optoelectronic programming of IGZO RRAM devices with a micro-LED array
Andrew Adair - U Strathclyde, Glasgow
Localizing Switching Sites: Low-Variability ECM Memristors via On-Chip Ag NP Synthesis
Markus Fischer-Butesheva - ETH Zurich
Defect-Trap Mediated Resistive Switching in TiO2 Photomemristors
Marina Sparvoli - U São Paulo
Direct operando STEM observation of coupled Cu filament dynamics in hafnia-based memristors
Taewook Kim - TU Darmstadt
GeSbTe Optical Memristor Devices for Neuromorphic Computer Vision
Neil Kemp - U Nottingham
Overcoming Filament Stochasticity: RESET-Based Programming in Electrochemical Metallization Memristors
Xin Zheng - FZ Jülich
Reconfigurable quantum dot light emitting memristor for neuromorphic computing
Yeunwoo Kwon - SNU, Seoul
Different modes of threshold switching in Ag/HfO2/Pt-based volatile electrochemical metallization memory (v-ECM) devices
Susanne Hoffmann-Eifert - FZ Jülich
Optically Tunable CuxO Based Memristor for Neuromorphic Computing
R. S. Harisankar - IIT Hydarabad
VCM/Modelling Analog Computing
15:45-16:15 The Role of Materials and Defects on the Electroforming and Switching Mechanism of Filamentary VCM Cells
Stephan Menzel - FZ Jülich
Emerging Analog Memories as Knobs for Multi-Scale Neural System Design
Melika Payvand - U/ETH Zurich
16:15-17:15 Hig-Temperature Retention and Degradation Mechanisms of Multilevel Conductive-Metal-Oxide/HfOx ReRAM
Marta Reyes - IBM, Zurich / NOVA School of Science and Technology, University of Lisbon
Analog Conductance Modulation in Percolative Ge₂Sb₂Te₅ Pathways Confined within a HfO₂ Nanoparticle Matrix
So-Young Lim - UNIST, Ulsan
Forming voltage reduction of 1T1R RRAM devices by tuning Ti/Al:HfO2 thickness ratio while maintaining reliable switching performance
Dorai Swarmy Reddy - IHP, Frankfurt/Oder
Physics-Informed Digital-Twin Reinforcement Learning Framework for Precise Multi-Level Programming of Analog Memristors
Zhuo Diao - Osaka U
Nanoscale Filament Evolution and Local Resistive Switching in Sub-Stoichiometric Yttrium Oxide Thin Films
Yen-Po Liu - FZ Jülich
Performance-Reliability Co-Optimization of TrioN(3N0C) Synaptic Memory for Analog AI Acceleration
Junyoung Choi - POSTECH, Pohang
Insights into Voltage-Driven Degradation Processes in Hafnia-Based Memristive Devices
Cristian Ferreyra - UAB Barcelona
Wafer-Scale Hexagonal Boron Nitride Memristors with Reliable Analog Switching
Jaesub Song - POSTECH, Pohang

Day 2 - Tuesday 6 October

09:00-09:45 Plenary – Ming Liu
Organic memristors Reservoir Computing
10:10-10:35 Memristors with Organic Self-Assembled Monolayers
Peer Kirsch - TU Darmstadt/Merck
Iontronic and Spintronics Reservoirs: Toward In-Materia Sensor Computing
Takashi Tsuchiya - NIMS, Tsukuba
10:35-11:50 Memristive and neuromorphic properties of CdIn2S4-based devices driven by metastable defect complexe
Jakub Zdziebłowski - Warsaw U
Resistive Random-Access Memory-Based Logic-in-Memory as a Tunable Temporal Encoding Kernel
Kunhee Son - SNU, Seoul
Deterministic Control of Neuromorphic Behavior in SI-ATRP Engineered Polymer Brush Memristors
Anna Kostecka - U Krakow
An Analog Pulse Amplitude-to-Width Encoding Circuit Using Single-Transistor-Latch Oscillator for Reservoir Computing
Byeong Su Kim - SNU, Seoul
A Highly Stable Multimodal Perovskite Heterojunction Memristor Enabling In-Memory Perception
Abdul Momin Syed - KAUST, Thuwal
Spatiotemporal Sequence Identification with Percolating Networks of Nanoparticles
Daniel Smith - U Canterbury, Christchurch
A Self-powered Optoelectronic In-sensor PUF Based on Halide Perovskites
Nivedan Amarnani - Nanyang TU, Singapore
Multiterminal characterization of spatio-temporal dynamics in self-organizing nanowire networks
Carlo Ricciardi - Politecnico di Torino
Soft reconfigurable self-assembled materials for embodied computing
Francesca Borghi - U Milano
Overcoming Dynamic Saturation in Memristor-based Physical Reservoir Computing via Input Spectral Mapping
Soohyeon Kim - U Michigan, Ann Arbor
Uncommon systems Noise
13:35-14:05 Programmable memristors with two-dimensional nanofluidic channels
Radha Boya - Manchester U
Understanding and Controlling Read Noise in VCM-based RRAM
Fabiana Taglietti - FZ Jülich
14:05-15:20 From Powder to Device: High Entropy Oxide for Resistive Switching Applications
Lukas Heinen - FZ Jülich
Voltage Dependence of Random Telegraphic Noise in SiOx RRAM Devices
Raju Vemuri - Velluri IT, Vellore
Temperature Induced Synaptic Fatigue in BiFeO3-Based Electronic Synapses
Sanchari Pal - IIST, Kerala
Full-cycle noise measurements in memristive systems: uncovering and reducing the stochasticity that limits device performance
Zoltán Balogh - Budapest U
Inkjet-Printed Hexagonal Boron Nitride Memristors: Current-Driven Characterization and Record Endurance at Low Switching Currents
Pere Aran Vila - U Barcelona
Temperature dependent characterization of HfO2 memristive devices and their noise analysis
Itir Köymen - TOBB ETÜ, Ankara
Delafossite p-CuGaO2 as a Switching Layer for Reliable Multifunctional Memory Applications
Mohammad Tauquir Shaikh - Sejong U
AFM-based local fluctuations spectroscopy of memristive systems
Gergö Fehérvári - Budapest U
Flexible LIG CuO/ZnO pn Nanoheterostructure for Efficient CO Detection at Room Temperature
Megha Megha - Shiv Nadar I, Noida
Low-Frequency Noise Uncovers Distinct Filament Dynamics in La-Doped and Undoped HfO₂-Based RRAM
Yingxin Li - TU Darmstadt
Silicon oxide / PCMO Spiking behavior
15:45-16:15 CMOS-compatible silicon-oxide memristors: Device characterization, compact modelling, and prospects for in-memory computing
Fernando Aguirre - Intrinsic Semiconductor
Memristor-based Parallel-Synapse Leaky Integrate-and-Fire Neuron Circuit for Non-Periodic Spiking Data Processing
Jen-Sue Chen - NCKU, Tainan
16:15-17:15 Tracing the origin of switching variability in SiOx:Cu memristive devices through fabrication, data mining and simulations
Sahitya Yaragolla - U Bochum
A Spiking Memristive Neuristor Chain at the Edge-of-Chaos
Richard Schroedter - TU Dresden
Detection and Statistical Analysis of Switching Behavior Transitions in SiOx-Based ReRAM
Paulius Abraitis - University College, London
Multimodal Memristive Blinking Neurons for Ultra-High Density Spiking Neural Networks
Yue Zhou - Hongkong U SciTech, Guangzhou
The role of deposition on oxygen exchange at the SiO2/Ta interfaces: a first-principles study
Margherita Buraschi - University College, London
Material-Intrinsic Synapse-Like Plasticity and Leaky Integrate-and-Fire Dynamics in a Quasi-One-Dimensional Molecular Memristor
Taishi Takenobu - Nagoya U
Amorphous, Highly Conductive Pr0.7Ca0.3MnO3 for Area-Dependent Resistive Switching Devices
Max Buczek - FZ Jülich
Electronic Pain Perception Enabled by Ag/CeO2 Diffusive Memristors
Subramanian Angappane - CNSMS Bangalore
17:45-20:00 Poster Session

Day 3 - Wednesday 7 October

Integration/Design Circuit design
09:00-09:25 Energy-Efficient Edge Systems via Emerging Memory Co-Integration
Erika Covi - TU München
From Compute-in-Memory to New Frontiers
Marc Reichenbach - U Rostock
09:25-10:25 Electrochemical Polishing Approach for Reliable Quantum Memristors
Ilia Valov - FZ Jülich
From MAGIC to PyPIM: The Evolution of Abstraction in PIM
Ronny Ronen - Technion
Noise-Enhanced Synaptic Weight Adaptation in HfO2 Memristive Synapses
Samrat Malakar - IIT Palakkad
Analog Resistive Switching Assessment of CMOS-Compatible Engineered HfO₂-Based RRAM Device
Gayathri Kuruvallur - IHP Frankfurt/Oder
Correlating the impact of structure, morphology and the defects of the solution-processed tungsten oxide on RRAM devices for PUF applications
Suresh Kumar Garlapati - IIT Hyderabad
Mixture density networks for probabilistic forecasting of resistive switching
Thiemo Benthien - Kiel U
Automated Statistical Validation Framework for Memristor-Based Random Number Generators Using NIST SP 800-22
Juan Castillo - UAB Barcelona
Design and Implementation of Single-/Multi-Stage Small-Signal Amplifier Circuits Based on Locally Active Memristors
Yan Liang - Hangzhou Dianzi U
TBD Ising machines
10:50-11:20 tba
Gina Adam - GWU Washington
Towards Scalable High-Order Ising Machines and SAT Solvers with In-Memory Computing
Dmitri Strukov/Tinish Bhattacharya - UC Santa Barbara
11:20-12:20 Anodic Memristors: From Electrochemical Oxide Growth to Tailored Resistive Switching Properties
Elena Atanasova - Johannes Kepler U, Linz
Closed-Loop In-Memory Computing for Energy-Based Nonlinear Optimization
Piergiulio Mannocci - Politecnico di Milano
In-Operando Thermoreflectance Imaging of Heating Localization during Self-Oscillation in Vanadium Dioxide Nanowires Memristors.
Thomas Ratier - UC Louvain
Scalable RRAM-Based ANalog Solver for Sparse Matrix Equations
Zheng Miao - Peking University, Beijing
Machine Learning with Material Chaos
Vivek Dey - IIS Bangalore
Fully-digital Domain Hybrid Ising Machine based on Floating-Body Charge-Trap Flash
Sunwoo Cheong - SNU, Seoul
Gallium oxide barrier engineering in HZO ferroelectric tunnel junctions for analog synapses
Mrinmoy Dutta - HZ Berlin
High frequency/Ultrafast Synaptic behavior
14:20-14:50 Design and performance analysis of rf switches based on resistive switching devices
Asal Kiazadeh - Unova, Lisboa
Unraveling the Local Current-Limit Mechanism behind Linear, Low-Voltage Synaptic Update in IGZO/Cu:Te Bilayer Memristor
Inho Kim - KIST, Seoul
14:50-15:35 Toward GHz operation of oscillating neural networks
Miklos Csontos - ETH, Zurich
Multimodal Learning and Dual-Wavelength Information Encoding in CuPc-Based Optoelectronic Artificial Synapses
Abhijith Anand - IIST, Kerala
Photomemristors for neuromorphic vision
Hongwei Tan - MPI
Time-Dependent Synaptic Plasticity and Neuromorphic Potential of Ag-Doped VCeOx-Based Analog RRAM Devices
Jiyeon Ryu - UNIST, Ulsan
Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor Based on Bi2Te3 Topological Insulator
MU Rashid - Soongsil U, Seoul
Time-series prediction with compact memristor circuits over a wide, adjustable operating frequency range
András Halbritter - Budapest U
Amorphous SrTiO3-x devices emulate multiple synaptic functionalities
Varun Ranade - Trinity College Dublin
15:45-16:10 Honorary session: Glenn Ge – From Science to Silicon Beyond von Neumann: The Memristor’s Industrialization Path to Scalable Real-World AI
16:10-17:30 Honorary session: Leon Chua 90 (Introduction by Ronald Tetzlaff)

Day 4 - Thursday 8 October

09:00-09:45 Plenary – Themis Prodromakis
Crossbar arrays Oscillators
10:10-10:35 The case of ferroelectric memristors and memcapacitors in passive crossbar arrays
Stefan Slesazeck - Namlab, Dresden
tba
Aida Todri-Sanial - Eindhoven U of Technology
10:35-11:20 Application of Memristors for Implementation of a Modified Hebbian Learning Rule
Xiaoyuan Wang - Anhui U
Light-Modulated Oscillatory Neuromorphic Devices Using Phase-Transition V₃O₅
Shimul Kanti Nath - UNSW Sydney
Impact of variations in n-type MOSFET electrical characteristics on 1T1R RRAM cells performance
Emilio Perez - IHP Frankfurt/Oder
Self-Sustained Oscillation Driven by Colossal Emergent Inductance in a Molecular Memristor
Yugo Oshima - RIKEN
Programming of artificial synapses in neurotransistors without direct gate node access
Hampus Hofmann - Namlab, Dresden
A Novel Spectral Method to Investigate Symmetry Breaking in Cellular Systems
Alon Ascoli - Politecnico di Torino